Name: IPB80N06S405ATMA2
Brand: Infineon Technologies
SKU: IPB80N06S405ATMA2
Price: 1.38000 USD
Availability: InStock

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IPB80N06S405ATMA2

Manufacturer part number:IPB80N06S405ATMA2

Manufacturer:Infineon Technologies

Description:IPB80N06S405ATMA2 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IPB80N06S405ATMA2 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Weight	1.946308g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	Automotive, AEC-Q101, OptiMOS™
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	107W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	107W
Case Connection	DRAIN
Turn On Delay Time	20 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	5.7m Ω @ 80A, 10V
Vgs(th) (Max) @ Id	4V @ 60μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	6500pF @ 25V
Current - Continuous Drain (Id) @ 25°C	80A Tc
Gate Charge (Qg) (Max) @ Vgs	81nC @ 10V
Rise Time	5ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	8 ns
Turn-Off Delay Time	35 ns
Continuous Drain Current (ID)	80A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	60V
Drain-source On Resistance-Max	0.0057Ohm
Drain to Source Breakdown Voltage	60V
Height	4.4mm
Length	10mm
Width	9.25mm
RoHS Status	ROHS3 Compliant

IPB80N06S405ATMA2 Product Details

IPB80N06S405ATMA2 Description

The MOSFET formed in which the conduction is due to the channel of majority charge carriers called electrons. When this MOSFET is activated as ON this condition results in the maximum amount of the current flow through the device. This type of MOSFET is defined as N-channel MOSFET.