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SI5855CDC-T1-E3

SI5855CDC-T1-E3

SI5855CDC-T1-E3

Vishay Siliconix

MOSFET P-CH 20V 3.7A 1206-8

SOT-23

SI5855CDC-T1-E3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Number of Pins 8
Weight 84.99187mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2013
Series LITTLE FOOT®
JESD-609 Code e3
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish PURE MATTE TIN
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormC BEND
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Pin Count8
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 1.3W Ta 2.8W Tc
Operating ModeENHANCEMENT MODE
Power Dissipation1.9W
Turn On Delay Time11 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 144m Ω @ 2.5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 276pF @ 10V
Current - Continuous Drain (Id) @ 25°C 3.7A Tc
Gate Charge (Qg) (Max) @ Vgs 6.8nC @ 5V
Rise Time34ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 34 ns
Turn-Off Delay Time 22 ns
Continuous Drain Current (ID) -3.7A
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 2.5A
Drain to Source Breakdown Voltage -20V
FET Feature Schottky Diode (Isolated)
Height 1.1mm
Length 3.05mm
Width 1.65mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:2544 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.083289$0.083289
500$0.061241$30.6205
1000$0.051035$51.035
2000$0.046821$93.642
5000$0.043758$218.79
10000$0.040705$407.05
15000$0.039366$590.49
50000$0.038708$1935.4

About SI5855CDC-T1-E3

The SI5855CDC-T1-E3 from Vishay Siliconix is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET P-CH 20V 3.7A 1206-8.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the SI5855CDC-T1-E3, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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