Name: IPD60R600P6
Brand: Infineon Technologies
SKU: IPD60R600P6
Availability: InStock

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IPD60R600P6

Manufacturer part number:IPD60R600P6

Manufacturer:Infineon Technologies

Description:IPD60R600P6 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IPD60R600P6 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	CoolMOS™ P6
JESD-609 Code	e3
Pbfree Code	no
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	63W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	600m Ω @ 2.4A, 10V
Input Capacitance (Ciss) (Max) @ Vds	557pF @ 100V
Current - Continuous Drain (Id) @ 25°C	7.3A Tc
Gate Charge (Qg) (Max) @ Vgs	12nC @ 10V
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	7.3A
Drain-source On Resistance-Max	0.6Ohm
Pulsed Drain Current-Max (IDM)	18A
DS Breakdown Voltage-Min	600V
Avalanche Energy Rating (Eas)	133 mJ
RoHS Status	ROHS3 Compliant

IPD60R600P6 Product Details

IPD60R600P6 Description

Infineon's CoolMOS Super Junction P6 MOSFET series is designed to achieve higher system efficiency while making it easy to design. CoolMOS powered P6 narrows the gap between technologies focused on providing ultimate performance and technologies focused on ease of use.