IRF7468PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
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IRF7468PBF Datasheet PDF
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Technical Specifications
Parameter Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2004
Series
HEXFET®
JESD-609 Code
e3
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Resistance
15.5MOhm
Terminal Finish
Matte Tin (Sn)
Additional Feature
AVALANCHE RATED
Subcategory
FET General Purpose Power
Voltage - Rated DC
40V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
9.4A
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
2.5W Ta
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.5W
Turn On Delay Time
7.6 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
15.5m Ω @ 9.4A, 10V
Vgs(th) (Max) @ Id
2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2460pF @ 20V
Current - Continuous Drain (Id) @ 25°C
9.4A Ta
Gate Charge (Qg) (Max) @ Vgs
34nC @ 4.5V
Rise Time
2.3ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±12V
Fall Time (Typ)
3.8 ns
Turn-Off Delay Time
20 ns
Continuous Drain Current (ID)
9.4A
Threshold Voltage
2V
Gate to Source Voltage (Vgs)
12V
Drain to Source Breakdown Voltage
40V
Pulsed Drain Current-Max (IDM)
75A
Height
1.4986mm
Length
4.9784mm
Width
3.9878mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
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IRF7468PBF Product Details
IRF7468PBF Description
The IRF7468PBF is a HEXFET? single N-channel Power MOSFET offering fully characterized avalanche voltage and current. The Infineon IRF7468PBF is suitable for high-frequency DC-to-DC isolated converters with synchronous rectification for telecom use and high-frequency buck converters. The Operating and Storage Temperature Range is between -55 and 150℃. And the MOSFET IRF7468PBF is in the SOIC-8 package with 2.5W power dissipation.
IRF7468PBF Features
Ultra-low gate impedance
Very low static drain-to-source ON-resistance at 4.5V gate-to-source voltage
Dynamic dV/dt rating
Fast switching
Fully avalanche rating
IRF7468PBF Applications
Power Management
Communications
Networking
Industrial
Computers & Computer Peripherals
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