Name: SI1012X-T1-GE3
Brand: Vishay Siliconix
SKU: SI1012X-T1-GE3
Price: 0.47000 USD
Availability: InStock

new-10%

SI1012X-T1-GE3

Manufacturer part number:SI1012X-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 20V 500MA SC89-3

Case Package:SOT-23

Datasheet:SI1012X-T1-GE3 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SC-89, SOT-490
Number of Pins	3
Weight	29.993795mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	700mOhm
Additional Feature	LOW THRESHOLD
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	250mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	250mW
Turn On Delay Time	5 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	700m Ω @ 600mA, 4.5V
Vgs(th) (Max) @ Id	900mV @ 250μA
Current - Continuous Drain (Id) @ 25°C	500mA Ta
Gate Charge (Qg) (Max) @ Vgs	0.75nC @ 4.5V
Rise Time	5ns
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±6V
Fall Time (Typ)	5 ns
Turn-Off Delay Time	25 ns
Continuous Drain Current (ID)	600mA
Threshold Voltage	900mV
Gate to Source Voltage (Vgs)	6V
Drain Current-Max (Abs) (ID)	0.5A
Drain to Source Breakdown Voltage	20V
Height	800μm
Length	1.7mm
Width	950μm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

About SI1012X-T1-GE3

The SI1012X-T1-GE3 from Vishay Siliconix is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 20V 500MA SC89-3.

Key Features

Advanced AVR architecture for efficient processing
Wide operating temperature range: -40°C to 85°C
Low power consumption for energy-efficient applications
Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

Industrial control systems
Consumer electronics
Automotive systems
IoT devices
Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the SI1012X-T1-GE3, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.