BSC030N08NS5ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
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BSC030N08NS5ATMA1 Datasheet PDF
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Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
26 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Number of Pins
8
Weight
506.605978mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2013
Series
OptiMOS™
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PDSO-F5
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
2.5W Ta 139W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.5W
Case Connection
DRAIN
Turn On Delay Time
20 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
3m Ω @ 50A, 10V
Vgs(th) (Max) @ Id
3.8V @ 95μA
Halogen Free
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
5600pF @ 40V
Current - Continuous Drain (Id) @ 25°C
100A Tc
Gate Charge (Qg) (Max) @ Vgs
76nC @ 10V
Rise Time
12ns
Drive Voltage (Max Rds On,Min Rds On)
6V 10V
Vgs (Max)
±20V
Fall Time (Typ)
13 ns
Turn-Off Delay Time
43 ns
Continuous Drain Current (ID)
22A
Gate to Source Voltage (Vgs)
20V
Max Dual Supply Voltage
80V
Drain-source On Resistance-Max
0.003Ohm
Drain to Source Breakdown Voltage
80V
Pulsed Drain Current-Max (IDM)
400A
Avalanche Energy Rating (Eas)
250 mJ
Max Junction Temperature (Tj)
150°C
Height
1.1mm
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead
In-Stock:3319 items
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BSC030N08NS5ATMA1 Product Details
BSC030N08NS5ATMA1 Description
BSC030N08NS5ATMA1 is a OptiMOS?5 80 V power MOSFET, especially designed for Synchronous Rectification for telecom and server power supplies. In addition, the device can also be utilized in other industrial applications such as solar, low voltage drives and adapter. Within seven different packages, the OptiMOS? 5 80 V MOSFETs offer the industry’s lowest RDS(on). Additionally, compared to the previous generation, OptiMOS? 5 80 V has an RDS(on) reduction of up to 43%. BSC030N08NS5ATMA1 Features
Optimized for synchronous rectification Ideal for high switching frequency Output capacitance reduction of up to 44 % RDS(on) reduction of up to 43 % from previous generation Less paralleling required BSC030N08NS5ATMA1 Applications
Low voltage drives Adapter Telecom Server Solar
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