Name: FDI038AN06A0
Brand: ON Semiconductor
SKU: FDI038AN06A0
Price: 2.72000 USD
Availability: InStock

new-10%

FDI038AN06A0

Manufacturer part number:FDI038AN06A0

Manufacturer:ON Semiconductor

Description:MOSFET 60V 80a 0.0038 Ohms/VGS=10V

Case Package:SOT-23

Datasheet:FDI038AN06A0 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	9 Weeks
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Weight	2.084g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2013
Series	PowerTrench®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	60V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
Current Rating	80A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSIP-T3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	310W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	310W
Case Connection	DRAIN
Turn On Delay Time	17 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3.8m Ω @ 80A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	6400pF @ 25V
Current - Continuous Drain (Id) @ 25°C	17A Ta 80A Tc
Gate Charge (Qg) (Max) @ Vgs	124nC @ 10V
Rise Time	144ns
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Fall Time (Typ)	60 ns
Turn-Off Delay Time	34 ns
Continuous Drain Current (ID)	80A
JEDEC-95 Code	TO-262AB
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0038Ohm
Drain to Source Breakdown Voltage	60V
Avalanche Energy Rating (Eas)	625 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

About FDI038AN06A0

The FDI038AN06A0 from ON Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET 60V 80a 0.0038 Ohms/VGS=10V.

Key Features

Advanced AVR architecture for efficient processing
Wide operating temperature range: -40°C to 85°C
Low power consumption for energy-efficient applications
Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

Industrial control systems
Consumer electronics
Automotive systems
IoT devices
Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the FDI038AN06A0, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.