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SI1012CR-T1-GE3

SI1012CR-T1-GE3

SI1012CR-T1-GE3

Vishay Siliconix

VISHAY - SI1012CR-T1-GE3 - Power MOSFET, N Channel, 20 V, 630 mA, 0.33 ohm, SC-75A, Surface Mount

SOT-23

SI1012CR-T1-GE3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-75, SOT-416
Number of Pins 3
Weight 2.012816mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2013
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 396mOhm
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormGULL WING
Pin Count3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 240mW Ta
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation240mW
Turn On Delay Time11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 396m Ω @ 600mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 43pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 2nC @ 8V
Rise Time16ns
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 11 ns
Turn-Off Delay Time 26 ns
Continuous Drain Current (ID) 630mA
Threshold Voltage 400mV
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 20V
Max Junction Temperature (Tj) 150°C
Height 800μm
Length 1.68mm
Width 860μm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:16771 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.404692$0.404692
10$0.381785$3.81785
100$0.360174$36.0174
500$0.339787$169.8935
1000$0.320554$320.554

About SI1012CR-T1-GE3

The SI1012CR-T1-GE3 from Vishay Siliconix is a high-performance microcontroller designed for a wide range of embedded applications. This component features VISHAY - SI1012CR-T1-GE3 - Power MOSFET, N Channel, 20 V, 630 mA, 0.33 ohm, SC-75A, Surface Mount.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the SI1012CR-T1-GE3, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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