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IXFJ20N85X

IXFJ20N85X

IXFJ20N85X

IXYS

MOSFET N-CH 850V 9.5A TO247

SOT-23

IXFJ20N85X Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 19 Weeks
Mounting Type Through Hole
Package / Case TO-247-3
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2017
Series HiPerFET™
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 110W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 360m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 5.5V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds 1660pF @ 25V
Current - Continuous Drain (Id) @ 25°C 9.5A Tc
Gate Charge (Qg) (Max) @ Vgs 63nC @ 10V
Drain to Source Voltage (Vdss) 850V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
RoHS StatusROHS3 Compliant
In-Stock:711 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$10.559000$10.559
10$9.961321$99.61321
100$9.397472$939.7472
500$8.865540$4432.77
1000$8.363717$8363.717

About IXFJ20N85X

The IXFJ20N85X from IXYS is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 850V 9.5A TO247.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IXFJ20N85X, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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