Name: FDMS86150
Brand: ON Semiconductor
SKU: FDMS86150
Price: 4.10000 USD
Availability: InStock

new-10%

FDMS86150

Manufacturer part number:FDMS86150

Manufacturer:ON Semiconductor

Description:FDMS86150 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDMS86150 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Weight	56.5mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Digi-Reel®
Series	PowerTrench®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	TIN
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PDSO-N5
Number of Elements	1
Power Dissipation-Max	2.7W Ta 156W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	156W
Case Connection	DRAIN
Turn On Delay Time	18 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4.85m Ω @ 16A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4065pF @ 50V
Current - Continuous Drain (Id) @ 25°C	16A Ta 60A Tc
Gate Charge (Qg) (Max) @ Vgs	62nC @ 10V
Rise Time	8.3ns
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Fall Time (Typ)	6 ns
Turn-Off Delay Time	28 ns
Continuous Drain Current (ID)	60A
JEDEC-95 Code	MO-240AA
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Pulsed Drain Current-Max (IDM)	300A
Avalanche Energy Rating (Eas)	726 mJ
Height	1.05mm
Length	5.1mm
Width	6.25mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

FDMS86150 Product Details

FDMS86150 Description

FDMS86150 N-Channel MOSFET is tailored to minimize the on-state resistance and yet maintain superior switching performance. FDMS86150 MOSFET can remove the additional components and improve system reliability in certain applications that require performance improvement of the body diode. FDMS86150 ON Semiconductor is used in Primary DC-DC MOSFET, Synchronous Rectifier, Load Switch.