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IRFI634GPBF

IRFI634GPBF

IRFI634GPBF

Vishay Siliconix

MOSFET (Metal Oxide) N-Channel Tube 450mOhm @ 3.4A, 10V ±20V 770pF @ 25V 41nC @ 10V 250V TO-220-3 Full Pack, Isolated Tab

SOT-23

IRFI634GPBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack, Isolated Tab
Number of Pins 3
Supplier Device Package TO-220-3
Weight 6.000006g
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2014
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 35W Tc
Element ConfigurationSingle
Power Dissipation35W
Turn On Delay Time9.6 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 450mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 770pF @ 25V
Current - Continuous Drain (Id) @ 25°C 5.6A Tc
Gate Charge (Qg) (Max) @ Vgs 41nC @ 10V
Rise Time21ns
Drain to Source Voltage (Vdss) 250V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 19 ns
Turn-Off Delay Time 42 ns
Continuous Drain Current (ID) 5.6A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 250V
Input Capacitance770pF
Drain to Source Resistance 450mOhm
Rds On Max 450 mΩ
Height 9.8mm
Length 10.63mm
Width 4.83mm
REACH SVHC Unknown
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:3657 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.833000$1.833
10$1.729245$17.29245
100$1.631363$163.1363
500$1.539022$769.511
1000$1.451908$1451.908

IRFI634GPBF Product Details

IRFI634GPBF Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 770pF @ 25V.This device conducts a continuous drain current (ID) of 5.6A, which is the maximum continuous current transistor can conduct.Using VGS=250V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 250V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 42 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 450mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 9.6 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 2V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 250V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IRFI634GPBF Features


a continuous drain current (ID) of 5.6A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 42 ns
single MOSFETs transistor is 450mOhm
a threshold voltage of 2V
a 250V drain to source voltage (Vdss)


IRFI634GPBF Applications


There are a lot of Vishay Siliconix
IRFI634GPBF applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching

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