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TK7E80W,S1X

TK7E80W,S1X

TK7E80W,S1X

Toshiba Semiconductor and Storage

MOSFET N-CH 800V 6.5A TO220

SOT-23

TK7E80W,S1X Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 16 Weeks
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220
Operating Temperature150°C
PackagingTube
Series DTMOSIV
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 110W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 950mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id 4V @ 280μA
Input Capacitance (Ciss) (Max) @ Vds 700pF @ 300V
Current - Continuous Drain (Id) @ 25°C 6.5A Ta
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Drain to Source Voltage (Vdss) 800V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
RoHS StatusRoHS Compliant
In-Stock:2930 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$2.88000$2.88
50$2.32500$116.25
100$2.09250$209.25
500$1.62750$813.75

About TK7E80W,S1X

The TK7E80W,S1X from Toshiba Semiconductor and Storage is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 800V 6.5A TO220.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the TK7E80W,S1X, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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