FQD7N10LTM Description
A patented planar stripe and DMOS technology is used to make the FQD7N10LTM N-Channel enhancement mode power MOSFET. This sophisticated MOSFET technology was specifically designed to reduce on-state resistance, give improved switching performance, and have a high avalanche energy strength. Switched-mode power supply, audio amplifiers, DC motor control, and variable switching power applications are all good candidates for FQD7N10LTM MOSFETs.
FQD7N10LTM Features
Low Crss ( Typ. 12pF)
100% avalanche tested
5.8A, 100V, RDS(on) = 350mΩ(Max.) @VGS = 10 V, ID = 2.9A
Low gate charge ( Typ. 4.6nC)
FQD7N10LTM Applications
LED TV
Lighting
Automotive electronics
Consumer electronics
Power supplies
DC-to-DC converters
Motor controllers
Radio-frequency (RF)
