BSZ16DN25NS3GATMA1 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 120 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 920pF @ 100V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 10.9A.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 11 ns.Peak drain current for this device is 44A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 6 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.This device supports dual supply voltages maximally powered by 250V.Using drive voltage (10V) reduces this device's overall power consumption.
BSZ16DN25NS3GATMA1 Features
the avalanche energy rating (Eas) is 120 mJ
a continuous drain current (ID) of 10.9A
the turn-off delay time is 11 ns
based on its rated peak drain current 44A.
BSZ16DN25NS3GATMA1 Applications
There are a lot of Infineon Technologies
BSZ16DN25NS3GATMA1 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
