IRL1404ZSPBF Description
This HEXFET power MOSFET uses the latest technology to achieve extremely low on-resistance per silicon area. Other features of the design include a 175 °C junction operating temperature, fast switching speed and an improved repeated avalanche rating. The combination of these functions makes the design an extremely efficient and reliable device for use in a variety of applications.
IRL1404ZSPBF Features
Logic Level
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
IRL1404ZSPBF Applications
The combination of these functions makes the design an extremely efficient and reliable device for use in a variety of applications.
