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GT10J312(Q)

GT10J312(Q)

GT10J312(Q)

Toshiba Semiconductor and Storage

IGBT 600V 10A 60W TO220SM

SOT-23

GT10J312(Q) Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Supplier Device Package TO-220SM
Operating Temperature150°C TJ
PackagingTube
Published 2007
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation60W
Base Part Number GT10
Input Type Standard
Power - Max 60W
Collector Emitter Voltage (VCEO) 2.7V
Max Collector Current 10A
Reverse Recovery Time 200 ns
Collector Emitter Breakdown Voltage600V
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 10A
Test Condition 300V, 10A, 100Ohm, 15V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 10A
Current - Collector Pulsed (Icm) 20A
Td (on/off) @ 25°C 400ns/400ns
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:4076 items

About GT10J312(Q)

The GT10J312(Q) from Toshiba Semiconductor and Storage is a high-performance microcontroller designed for a wide range of embedded applications. This component features IGBT 600V 10A 60W TO220SM.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the GT10J312(Q), including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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