IRG4PSH71KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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IRG4PSH71KDPBF Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
7 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-274AA
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Published
1999
JESD-609 Code
e3
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
Through Hole
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature
LOW CONDUCTION LOSS
Subcategory
Insulated Gate BIP Transistors
Voltage - Rated DC
1.2kV
Max Power Dissipation
350W
Peak Reflow Temperature (Cel)
250
Current Rating
78A
[email protected] Reflow Temperature-Max (s)
30
Number of Elements
1
Element Configuration
Single
Power Dissipation
350W
Case Connection
COLLECTOR
Input Type
Standard
Transistor Application
MOTOR CONTROL
Rise Time
84ns
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
3.9V
Max Collector Current
78A
Reverse Recovery Time
107 ns
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Collector Emitter Saturation Voltage
2.97V
Turn On Time
152 ns
Test Condition
800V, 42A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic
3.9V @ 15V, 42A
Turn Off Time-Nom (toff)
660 ns
Gate Charge
410nC
Current - Collector Pulsed (Icm)
156A
Td (on/off) @ 25°C
67ns/230ns
Switching Energy
5.68mJ (on), 3.23mJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
6V
Fall Time-Max (tf)
190ns
Height
20.8mm
Length
16.0782mm
Width
5.3mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:1191 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$3.869920
$3.86992
10
$3.650868
$36.50868
100
$3.444215
$344.4215
500
$3.249259
$1624.6295
1000
$3.065339
$3065.339
IRG4PSH71KDPBF Product Details
IRG4PSH71KDPBF Description
The IRG4PSH71KDPBF is a bipolar transistor with an ultrafast soft recovery diode and an insulated gate. The HEXFREDTM diode has been tuned for use with IGBTs in order to reduce EMI, noise, and switching losses.
IRG4PSH71KDPBF Features
Maximum power density
High abort circuit rating IGBTs
Tightest parameter distribution
High current rating co-pack IGBT
Hole-less clip/pressure mount package
Creepage distance increased to 5.35mm
Minimum switching losses combined with low conduction losses
IGBT co-packaged with ultrafast soft recovery anti-parallel diode
IRG4PSH71KDPBF Applications
Alternative Energy
Power Management
Motor Drive & Control
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