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IRGB4640DPBF

IRGB4640DPBF

IRGB4640DPBF

Infineon Technologies

IRGB4640DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRGB4640DPBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 18 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 2015
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation250W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Input Type Standard
Power - Max 250W
Collector Emitter Voltage (VCEO) 1.9V
Max Collector Current 65A
Reverse Recovery Time 89 ns
Collector Emitter Breakdown Voltage600V
Test Condition 400V, 24A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 24A
Gate Charge75nC
Current - Collector Pulsed (Icm) 72A
Td (on/off) @ 25°C 41ns/104ns
Switching Energy 115μJ (on), 600μJ (off)
RoHS StatusRoHS Compliant
In-Stock:1964 items

IRGB4640DPBF Product Details

IRGP4690DPBF Description


Ultrafast Soft Recovery Diode in an Insulated Gate Bipolar Transistor



IRGP4690DPBF Features


  • efficiency and high switching frequency for a variety of applications

  • Increased dependability is the result of stronger hard switching performance and higher power capabilities.

  • good parallel operation while sharing the current

  • allows for a system of short circuit protection.

  • Environmentally friendly and RoHS compliant



IRGP4690DPBF Applications


? Drive for industrial motors


? Converters


? UPS


? Welder


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