2SC4116-GR,LF Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 70 @ 2mA 6V.The collector emitter saturation voltage is 100mV, giving you a wide variety of design options.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 10mA, 100mA.Continuous collector voltage should be kept at 150mA for high efficiency.The base voltage of the emitter can be kept at 5V to achieve high efficiency.As a result, it can handle voltages as low as 50V volts.When collector current reaches its maximum, it can reach 150mA volts.
2SC4116-GR,LF Features
the DC current gain for this device is 70 @ 2mA 6V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
2SC4116-GR,LF Applications
There are a lot of Toshiba Semiconductor and Storage 2SC4116-GR,LF applications of single BJT transistors.
- Muting
- Inverter
- Interface
- Driver
