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JANTX2N5667

JANTX2N5667

JANTX2N5667

Microsemi Corporation

JANTX2N5667 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JANTX2N5667 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 20 Weeks
Contact PlatingLead, Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AA, TO-5-3 Metal Can
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-65°C~200°C TJ
PackagingBulk
Published 2007
Series Military, MIL-PRF-19500/455
JESD-609 Code e0
Pbfree Code no
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Power Dissipation1.2W
Terminal Position BOTTOM
Terminal FormPIN/PEG
Pin Count2
JESD-30 Code O-MBFM-P2
Qualification StatusQualified
Number of Elements 1
Configuration SINGLE
Power Dissipation1.2W
Case Connection COLLECTOR
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 300V
Max Collector Current 5A
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 1A 5V
Current - Collector Cutoff (Max) 200nA
Vce Saturation (Max) @ Ib, Ic 1V @ 1A, 5A
Collector Base Voltage (VCBO) 400V
Emitter Base Voltage (VEBO) 6V
Radiation HardeningNo
RoHS StatusNon-RoHS Compliant
In-Stock:315 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$27.436000$27.436
10$25.883019$258.83019
100$24.417942$2441.7942
500$23.035795$11517.8975
1000$21.731882$21731.882

JANTX2N5667 Product Details

JANTX2N5667 Overview


In this device, the DC current gain is 25 @ 1A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 1A, 5A.The base voltage of the emitter can be kept at 6V to achieve high efficiency.Maximum collector currents can be below 5A volts.

JANTX2N5667 Features


the DC current gain for this device is 25 @ 1A 5V
the vce saturation(Max) is 1V @ 1A, 5A
the emitter base voltage is kept at 6V

JANTX2N5667 Applications


There are a lot of Microsemi Corporation JANTX2N5667 applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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