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CSD86311W1723

CSD86311W1723

CSD86311W1723

Texas Instruments

CSD86311W1723 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Texas Instruments stock available on our website

SOT-23

CSD86311W1723 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 12-UFBGA, DSBGA
Number of Pins 12
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Series NexFET™
JESD-609 Code e1
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 12
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
HTS Code8541.29.00.95
Subcategory FET General Purpose Power
Max Power Dissipation1.5W
Terminal Position BOTTOM
Terminal FormBALL
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number CSD86311
Pin Count12
Qualification StatusNot Qualified
Number of Elements 2
Element ConfigurationDual
Operating ModeENHANCEMENT MODE
Power Dissipation1.5W
Turn On Delay Time5.4 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 39m Ω @ 2A, 8V
Vgs(th) (Max) @ Id 1.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 585pF @ 12.5V
Gate Charge (Qg) (Max) @ Vgs 4nC @ 4.5V
Rise Time4.3ns
Drain to Source Voltage (Vdss) 25V
Fall Time (Typ) 2.9 ns
Turn-Off Delay Time 13.2 ns
Continuous Drain Current (ID) 4.5A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 10V
Drain-source On Resistance-Max 0.051Ohm
Drain to Source Breakdown Voltage 25V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 1 V
Feedback Cap-Max (Crss) 13 pF
Height 625μm
Length 0m
Width 0m
Thickness 375μm
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Contains Lead
In-Stock:16058 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$5.494160$5.49416
10$5.183170$51.8317
100$4.889783$488.9783
500$4.613003$2306.5015
1000$4.351889$4351.889

CSD86311W1723 Product Details

CSD86311W1723 Description


The device's design aims to produce the lowest gate charge and on-resistance while maintaining the best thermal performance in an extremely low profile. The device is best for battery-operated space-constrained applications in load management and DC-DC converters because to its low on-state and gate charge as well as its tiny footprint and low profile.



CSD86311W1723 Features


?N-Ch dual MOSFETs


?Regular Source Configuration


?Miniature Footprint 1.7 x 2.3 mm


?Lowest Possible Qg and Qgd


?Bp Free


? RoHS conformant


?Free of Halogen



CSD86311W1723 Applications


?Management of batteries


?Battery Security


?Convertor DC-DC


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