ZXMC4559DN8 Series 60 V 0.55 Ohm Dual N/P-Channel Enhancement Mode MOSFET SOIC-8
SOT-23
ZXMC4559DN8TA Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
17 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Weight
73.992255mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2012
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
105mOhm
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
2.1W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
4.7A
[email protected] Reflow Temperature-Max (s)
40
Pin Count
8
Number of Elements
2
Number of Channels
2
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.1W
Turn On Delay Time
3.5 ns
Power - Max
1.25W
FET Type
N and P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
55m Ω @ 4.5A, 10V
Vgs(th) (Max) @ Id
1V @ 250μA (Min)
Input Capacitance (Ciss) (Max) @ Vds
1063pF @ 30V
Current - Continuous Drain (Id) @ 25°C
3.6A 2.6A
Gate Charge (Qg) (Max) @ Vgs
20.4nC @ 10V
Rise Time
4.1ns
Polarity/Channel Type
N-CHANNEL AND P-CHANNEL
Fall Time (Typ)
10 ns
Turn-Off Delay Time
35 ns
Continuous Drain Current (ID)
4.7A
Threshold Voltage
1V
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
3.6A
Drain to Source Breakdown Voltage
60V
Dual Supply Voltage
60V
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
Nominal Vgs
1 V
Height
1.5mm
Length
5mm
Width
4mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:4816 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.461227
$0.461227
10
$0.435120
$4.3512
100
$0.410491
$41.0491
500
$0.387255
$193.6275
1000
$0.365335
$365.335
ZXMC4559DN8TA Product Details
Description:
The ZXMC4559DN8TA is a dual N/P-channel enhancement mode MOSFET from Diodes Inc. It is designed to provide high performance and low on-resistance in a small SOIC-8 package. This device is rated for a maximum drain-source voltage of 60 V and a maximum drain current of 8 A. It has a low on-resistance of 0.55 Ohm and a fast switching speed of 10 ns.
Features:
• Dual N/P-channel enhancement mode MOSFET • Maximum drain-source voltage: 60 V • Maximum drain current: 8 A • Low on-resistance: 0.55 Ohm • Fast switching speed: 10 ns • Small SOIC-8 package
Applications:
The ZXMC4559DN8TA is suitable for a wide range of applications, including power management, motor control, and switching power supplies. It is also suitable for use in automotive, industrial, and consumer electronics.
Related Products
Similar Transistors - FETs, MOSFETs - Arrays from Diodes Incorporated and other manufacturers
