CSD25213W10 Description
CSD25213W10 emerges as a member of the family of P-channel NexFET? power MOSFET. It is able to provide ultra-low Qg and Qgd, gate-source voltage clamp, and gate ESD protection. It is specifically designed to offer low on-state resistance and low gate charge in a low profile while ensuring good thermal characteristics.
CSD25213W10 Features
Extremely low Qg and Qgd
Small footprint 1mm × 1mm
Low profile 0.62mm Height
Gate-source voltage clamp
Gate ESD protection
Supplied in the 1 × 1 Wafer-level package
CSD25213W10 Applications
Load switch
Battery protection
Battery management
