Name: IRFP4321PBF
Brand: Infineon Technologies
SKU: IRFP4321PBF
Price: 5.74000 USD
Availability: InStock

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IRFP4321PBF

Manufacturer part number:IRFP4321PBF

Manufacturer:Infineon Technologies

Description:IRFP4321PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRFP4321PBF Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Supplier Device Package	TO-247AC
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2006
Series	HEXFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Termination	Through Hole
Resistance	15.5MOhm
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Voltage - Rated DC	150V
Technology	MOSFET (Metal Oxide)
Current Rating	78A
Power Dissipation-Max	310W Tc
Element Configuration	Single
Power Dissipation	310mW
Turn On Delay Time	18 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	15.5mOhm @ 33A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4460pF @ 25V
Current - Continuous Drain (Id) @ 25°C	78A Tc
Gate Charge (Qg) (Max) @ Vgs	110nC @ 10V
Rise Time	60ns
Drain to Source Voltage (Vdss)	150V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	35 ns
Turn-Off Delay Time	25 ns
Continuous Drain Current (ID)	78A
Threshold Voltage	5V
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	150V
Dual Supply Voltage	150V
Input Capacitance	4.46nF
Recovery Time	130 ns
Drain to Source Resistance	15.5mOhm
Rds On Max	15.5 mΩ
Nominal Vgs	5 V
Height	20.3mm
Length	15.875mm
Width	5.3mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

IRFP4321PBF Product Details

IRFP4321PBF Description

The Infineon Technologies IRFP4321PBF HEXFET Power MOSFET features benchmark on-state resistance (R_DS(on)) and high package current ratings for high-power DC motors, power tools, industrial batteries and power supply applications. Utilizing IR’s latest trench technology, this family of benchmark MOSFETs offers a low RDS(on) at 4.5Vgs to significantly improve thermal efficiency.