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FQB19N10LTM

FQB19N10LTM

FQB19N10LTM

ON Semiconductor

MOSFET N-CH 100V 19A D2PAK

SOT-23

FQB19N10LTM Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK (TO-263AB)
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 2000
Series QFET®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 3.75W Ta 75W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 100mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 870pF @ 25V
Current - Continuous Drain (Id) @ 25°C 19A Tc
Gate Charge (Qg) (Max) @ Vgs 18nC @ 5V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
In-Stock:16122 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.655059$0.655059
10$0.617980$6.1798
100$0.583000$58.3
500$0.550000$275
1000$0.518868$518.868

About FQB19N10LTM

The FQB19N10LTM from ON Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 100V 19A D2PAK.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the FQB19N10LTM, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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