CSD23280F3 Description
The footprint of many handheld and mobile applications is reduced by the design and optimization of this -12-V, 97-m, P-Channel FemtoFETTM MOSFET. Standard tiny signal MOSFETs can be replaced with this technology while having a significantly smaller footprint. This technology attempts to increase avalanche energy, increase dv/dt rate, decrease conduction loss, and improve switching performance.
CSD23280F3 Features
? Minimal On-Resistance
? Extremely Low Qg and Qd
? High drain current operation
? Extremely small footprint: 0.73 by 0.64 millimeters
? Ultra-low profile - maximum height of 0.36 mm
CSD23280F3 Applications
? Designed with load switch applications in mind.
? Designed with general switching applications in mind
? Applications for batteries
? Mobile and handheld applications
