FDB8030L Description
The FDB8030L is a logic level N-channel MOSFET designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It features faster switching and a lower gate charge than other MOSFETs with comparable RDS (ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies) and DC-to-DC power supply designs with higher overall efficiency. The rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
FDB8030L Features
RDS(ON) = 0.0045 ? @ VGS = 4.5 V
Critical DC electrical parameters specified at elevated temperature
Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor
High performance trench technology for extremely low RDS(ON)
175°C maximum junction temperature rating
FDB8030L Applications
Induction furnaces
Arc furnaces and arc welders
Steel rolling mills
Large motors with periodic loading
Thyristor drives
Railway traction which is mostly through d.c. drives
Industrial
