CSD16570Q5BT datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available on our website
SOT-23
CSD16570Q5BT Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Contact Plating
Gold
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Number of Pins
8
Weight
24.012046mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
NexFET™
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
Terminal Finish
Matte Tin (Sn)
Additional Feature
AVALANCHE RATED
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
NO LEAD
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
CSD16570
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
3.2W Ta 195W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Turn On Delay Time
5 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
0.59m Ω @ 50A, 10V
Vgs(th) (Max) @ Id
1.9V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
14000pF @ 12V
Current - Continuous Drain (Id) @ 25°C
100A Ta
Gate Charge (Qg) (Max) @ Vgs
250nC @ 10V
Rise Time
43ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
72 ns
Turn-Off Delay Time
156 ns
Continuous Drain Current (ID)
100A
Threshold Voltage
1.5V
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
59A
Drain to Source Breakdown Voltage
25V
Pulsed Drain Current-Max (IDM)
400A
Length
5mm
Width
6mm
Thickness
950μm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead
In-Stock:2945 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$4.355145
$4.355145
10
$4.108628
$41.08628
100
$3.876063
$387.6063
500
$3.656664
$1828.332
1000
$3.449683
$3449.683
CSD16570Q5BT Product Details
CSD16570Q5BT Description
The CSD16570Q5BT is a 25 V, 0.49 m, SON 5 x 6 mm NexFETTM power MOSFET developed for ORing and hot-swap applications. It is not intended for switching applications.
CSD16570Q5BT Features
Extremely Low Resistance
Low Qg and Qgd
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
Low Thermal Resistance
Avalanche Rated
SON 5-mm × 6-mm Plastic Package
CSD16570Q5BT Applications
Solid State Relay Switch
DC-DC Conversion
ORing and Hot-Swap Applications
Secondary Side Synchronous Rectifier
Isolated Converter Primary Side Switch
Motor Control
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