CSD17570Q5B datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available on our website
SOT-23
CSD17570Q5B Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 5 days ago)
Contact Plating
Gold
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
NexFET™
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
AVALANCHE RATED
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
NO LEAD
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
CSD17570
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
3.2W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Turn On Delay Time
5 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
0.69m Ω @ 50A, 10V
Vgs(th) (Max) @ Id
1.9V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
13600pF @ 15V
Current - Continuous Drain (Id) @ 25°C
100A Ta
Gate Charge (Qg) (Max) @ Vgs
121nC @ 4.5V
Rise Time
36ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
44 ns
Turn-Off Delay Time
144 ns
Continuous Drain Current (ID)
100A
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
53A
Drain-source On Resistance-Max
0.00092Ohm
Drain to Source Breakdown Voltage
30V
Pulsed Drain Current-Max (IDM)
360A
Avalanche Energy Rating (Eas)
450 mJ
Length
5mm
Width
6mm
Thickness
950μm
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead
In-Stock:3519 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$4.812840
$4.81284
10
$4.540415
$45.40415
100
$4.283410
$428.341
500
$4.040953
$2020.4765
1000
$3.812220
$3812.22
CSD17570Q5B Product Details
CSD17570Q5B Description
CSD17570Q5B power MOSFET is designed to minimize resistance for ORing and hot swap applications and is not intended for switching applications. CSD17570Q5B MOSFET has the following characteristic: Low-Thermal Resistance, Avalanche Rated, Lead Free, RoHS Compliant, Halogen Free. CSD17570Q5B IC is suitable for Solid State Relay Switch, DC-DC Conversion, Secondary Side Synchronous Rectifier, Isolated Converter Primary Side Switch, as well as Motor Control.
