FDC5612 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FDC5612 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
5 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-23-6 Thin, TSOT-23-6
Number of Pins
6
Weight
36mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
1999
Series
PowerTrench®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Resistance
55mOhm
Subcategory
FET General Purpose Power
Voltage - Rated DC
60V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
4.3A
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
1.6W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
1.6W
Turn On Delay Time
11 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
55m Ω @ 4.3A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
650pF @ 25V
Current - Continuous Drain (Id) @ 25°C
4.3A Ta
Gate Charge (Qg) (Max) @ Vgs
18nC @ 10V
Rise Time
8ns
Drive Voltage (Max Rds On,Min Rds On)
6V 10V
Vgs (Max)
±20V
Fall Time (Typ)
8 ns
Turn-Off Delay Time
19 ns
Continuous Drain Current (ID)
4.3A
Threshold Voltage
2.2V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
60V
Dual Supply Voltage
60V
Max Junction Temperature (Tj)
150°C
Height
1.1mm
Length
3mm
Width
1.7mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:9992 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.67000
$0.67
500
$0.6633
$331.65
1000
$0.6566
$656.6
1500
$0.6499
$974.85
2000
$0.6432
$1286.4
2500
$0.6365
$1591.25
FDC5612 Product Details
FDC5612 Description
The FDC5612 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
FDC5612 Features
Low gate charge (12.5nC typical)
Fast switching speed
High performance trench technology for extremely low RDS(ON)
SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick)
ROHS3 Compliant
Lead Free
No SVHC
FDC5612 Applications
Switching Application
New Energy Vehicle
Photovoltaic Generation
Wind Power Generation
Smart Grid
Related Products
Similar Transistors - FETs, MOSFETs - Single from ON Semiconductor and other manufacturers
