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SIHP18N60E-GE3

SIHP18N60E-GE3

SIHP18N60E-GE3

Vishay Siliconix

MOSFET N-CH 600V 18A TO220AB

SOT-23

SIHP18N60E-GE3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 14 Weeks
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220AB
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2017
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 179W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 202mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1640pF @ 100V
Current - Continuous Drain (Id) @ 25°C 18A Tc
Gate Charge (Qg) (Max) @ Vgs 92nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
RoHS StatusNon-RoHS Compliant
In-Stock:4891 items

Pricing & Ordering

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About SIHP18N60E-GE3

The SIHP18N60E-GE3 from Vishay Siliconix is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 600V 18A TO220AB.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the SIHP18N60E-GE3, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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