Welcome to Hotenda.com Online Store!

logo
userjoin
Home

CSD17510Q5A

CSD17510Q5A

CSD17510Q5A

Texas Instruments

CSD17510Q5A datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available on our website

SOT-23

CSD17510Q5A Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Contact PlatingTin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Series NexFET™
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Additional FeatureAVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Base Part Number CSD17510
Pin Count8
Number of Elements 1
Power Dissipation-Max 3W Ta
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation3W
Case Connection DRAIN
Turn On Delay Time7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.2m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1250pF @ 15V
Current - Continuous Drain (Id) @ 25°C 20A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs 8.3nC @ 4.5V
Rise Time11ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 4.1 ns
Turn-Off Delay Time 9 ns
Continuous Drain Current (ID) 20A
Threshold Voltage 1.5V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0073Ohm
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 45 mJ
Nominal Vgs 1.5 V
Feedback Cap-Max (Crss) 66 pF
Height 1.1mm
Length 4.9mm
Width 6mm
Thickness 1mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Contains Lead
In-Stock:5160 items

Pricing & Ordering

QuantityUnit PriceExt. Price

CSD17510Q5A Product Details

CSD17510Q5A Description


CSD17510Q5A emerges as an N-Channel NexFET? power MOSFET with ultra-low Qg and Qgd, as well as low thermal resistance. It is capable of minimizing losses in power conversion applications. As a result, it is well suited for control or synchronous FET applications, and point-of-load synchronous buck converter for applications in networking, telecom, and computing systems.



CSD17510Q5A Features


  • Logic level

  • Ultra-low Qg and Qgd

  • Low thermal resistance

  • Available in the SON plastic package



CSD17510Q5A Applications


  • Point-of-load synchronous buck converter for applications in networking, telecom, and computing systems

  • Optimized for control or synchronous FET applications


Get Subscriber

Enter Your Email Address, Get the Latest News