STF17N80K5 Description
Using cutting-edge proprietary vertical structure technology, MDmeshTM K5 technology was used to build this extremely high voltage N-channel Power MOSFET. As a result, on-resistance is drastically reduced, and ultra-low gate charges are produced for applications demanding a high level of efficiency and higher power density.
STF17N80K5 Features
Lowest RDS(on) x area in the industry
The highest merit figure in the sector (FoM)
Very little gate charge
Avalanche tested and Zener-protected 100 percent
STF17N80K5 Applications
Switching applications
