Name: FDC637BNZ
Brand: ON Semiconductor
SKU: FDC637BNZ
Price: 0.52000 USD
Availability: InStock

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FDC637BNZ

Manufacturer part number:FDC637BNZ

Manufacturer:ON Semiconductor

Description:FDC637BNZ datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDC637BNZ Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Number of Pins	6
Weight	36mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
Series	PowerTrench®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Resistance	24MOhm
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1.6W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	800mW
Turn On Delay Time	8 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	24m Ω @ 6.2A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	895pF @ 10V
Current - Continuous Drain (Id) @ 25°C	6.2A Ta
Gate Charge (Qg) (Max) @ Vgs	12nC @ 4.5V
Rise Time	6ns
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	6 ns
Turn-Off Delay Time	22 ns
Continuous Drain Current (ID)	6.2A
Threshold Voltage	800mV
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	20V
Max Junction Temperature (Tj)	150°C
Nominal Vgs	800 mV
Height	1.1mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

FDC637BNZ Product Details

FDC637BNZ Description

FDC637BNZ is a type of P-channel PowerTrench? specified MOSFET provided by ON Semiconductor based on the high-performance trench technology for extremely low RDS (on). It is able to provide extremely low RDS (on) and fast switching speed. Due to its specific characteristics and reliable performance, it is ideally suitable for load switch, battery protection, and DC-DC conversion.