Name: CSD17381F4
Brand: Texas Instruments
SKU: CSD17381F4
Price: 0.45000 USD
Availability: InStock

new-10%

CSD17381F4

Manufacturer part number:CSD17381F4

Manufacturer:Texas Instruments

Description:MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 109m Ω @ 500mA, 8A 195pF @ 15V 1.35nC @ 4.5V 3-XFDFN

Case Package:SOT-23

Datasheet:CSD17381F4 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 4 days ago)
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	3-XFDFN
Number of Pins	3
Transistor Element Material	SILICON
Manufacturer Package Identifier	3-PICOSTAR
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	NexFET™
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	ULTRA LOW RESISTANCE
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	260
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	CSD17381
Number of Elements	1
Power Dissipation-Max	500mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	500mW
Case Connection	DRAIN
Turn On Delay Time	3.4 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	109m Ω @ 500mA, 8A
Vgs(th) (Max) @ Id	1.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	195pF @ 15V
Current - Continuous Drain (Id) @ 25°C	3.1A Ta
Gate Charge (Qg) (Max) @ Vgs	1.35nC @ 4.5V
Rise Time	1.4ns
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Fall Time (Typ)	3.6 ns
Turn-Off Delay Time	10.8 ns
Continuous Drain Current (ID)	3.1A
Gate to Source Voltage (Vgs)	12V
Drain-source On Resistance-Max	0.25Ohm
Drain to Source Breakdown Voltage	30V
Feedback Cap-Max (Crss)	2.9 pF
Height	350μm
Length	1.035mm
Width	635μm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

CSD17381F4 Product Details

CSD17381F4 Description

The design and optimization of this 90 m, 30 V N-Channel FemtoFETTM MOSFET technology minimizes the footprint in numerous handheld and mobile applications. Standard tiny signal MOSFETs can be replaced with this technology, which also offers a footprint size reduction of at least 60%.