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NDT456P

NDT456P

NDT456P

ON Semiconductor

NDT456P datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

NDT456P Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 18 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Weight 250.2mg
Transistor Element Material SILICON
Operating Temperature-65°C~150°C TJ
PackagingTape & Reel (TR)
Published 2017
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Termination SMD/SMT
ECCN Code EAR99
Resistance 30mOhm
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -30V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormGULL WING
Current Rating-7.3A
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3W Ta
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation3W
Case Connection DRAIN
Turn On Delay Time10 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 30m Ω @ 7.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1440pF @ 15V
Current - Continuous Drain (Id) @ 25°C 7.5A Ta
Gate Charge (Qg) (Max) @ Vgs 67nC @ 10V
Rise Time65ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 70 ns
Turn-Off Delay Time 70 ns
Continuous Drain Current (ID) 7.5A
Threshold Voltage 1.5V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -30V
Pulsed Drain Current-Max (IDM) 20A
Dual Supply Voltage 30V
Max Junction Temperature (Tj) 150°C
Nominal Vgs 1.5 V
Height 1.8mm
Length 6.7mm
Width 6.7mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:3089 items

Pricing & Ordering

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NDT456P Product Details

NDT456P Description


NDT456P is a P-Channel Enhancement Mode Field Effect Transistor. Power SOT P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high-density process is specially tailored to minimize on-state resistance and provide superior switching performance. The onsemi NDT456P is particularly suited for low voltage applications such as notebook computer power management, battery-powered circuits, and DC motor control.



NDT456P Features


  • -7.5 A, -30 V

RDS(ON) = 0.030 Ω @ VGS = -10 V

RDS(ON) = 0.045 Ω @ VGS = -4.5 V

  • High-density cell design for extremely low RDS(ON)

  • High power and current handling capability in a widely used surface mount package

  • In the SOT-223-4 package

  • Power dissipation: 3W



NDT456P Applications


  • Power Management

  • Motor Drive & Control

  • Notebook computer power management

  • Battery-powered circuits

  • DC motor control


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