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BSC160N15NS5ATMA1

BSC160N15NS5ATMA1

BSC160N15NS5ATMA1

Infineon Technologies

BSC160N15NS5ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

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BSC160N15NS5ATMA1 Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 26 Weeks
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Surface MountYES
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2013
Series OptiMOS™
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormFLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 96W Tc
Operating ModeENHANCEMENT MODE
Power Dissipation96W
Case Connection DRAIN
Turn On Delay Time9.6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 16m Ω @ 28A, 10V
Vgs(th) (Max) @ Id 4.6V @ 60μA
Input Capacitance (Ciss) (Max) @ Vds 1820pF @ 75V
Current - Continuous Drain (Id) @ 25°C 56A Tc
Gate Charge (Qg) (Max) @ Vgs 23.1nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 8V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 10.8 ns
Continuous Drain Current (ID) 56A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 150V
Pulsed Drain Current-Max (IDM) 224A
Avalanche Energy Rating (Eas) 43 mJ
Max Junction Temperature (Tj) 150°C
Height 1.1mm
RoHS StatusROHS3 Compliant
In-Stock:2546 items

Pricing & Ordering

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BSC160N15NS5ATMA1 Product Details

BSC160N15NS5ATMA1 Description


The Infineon Technologies BSC160N15NS5ATMA1 is a new OptiMOSTM 5 150 V power MOSFET that is ideal for low voltage drives like forklifts and e-scooters, as well as telecom and solar applications. The new products provide a breakthrough decrease in R DS(on) and Q RR (up to 25% less than the next best choice in SuperSO8) without sacrificing FOM gd and FOM OSS, effectively decreasing design effort while optimizing system efficiency. Furthermore, the extremely low reverse recovery charge (Q RR = 26 nC in SuperSO8) improves commutation toughness.



BSC160N15NS5ATMA1 Features


  • Lower output charge

  • Ultra-low reverse recovery charge

  • Increased commutation ruggedness

  • Lower RDS(on) without compromising FOMgd and FOMoss

  • Higher switching frequency possible



BSC160N15NS5ATMA1 Applications


  • Solar

  • Low voltage drives

  • Telecom


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