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IPA60R600P7XKSA1

IPA60R600P7XKSA1

IPA60R600P7XKSA1

Infineon Technologies

N-Channel Tube 600m Ω @ 1.7A, 10V ±20V 363pF @ 400V 9nC @ 10V TO-220-3 Full Pack

SOT-23

IPA60R600P7XKSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 18 Weeks
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Surface MountNO
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Series CoolMOS™ P7
Published 2014
Part StatusActive
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 3
ECCN Code EAR99
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 21W Tc
Operating ModeENHANCEMENT MODE
Power Dissipation21W
Case Connection ISOLATED
Turn On Delay Time7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 600m Ω @ 1.7A, 10V
Vgs(th) (Max) @ Id 4V @ 80μA
Input Capacitance (Ciss) (Max) @ Vds 363pF @ 400V
Current - Continuous Drain (Id) @ 25°C 6A Tc
Gate Charge (Qg) (Max) @ Vgs 9nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Turn-Off Delay Time 37 ns
Continuous Drain Current (ID) 6A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.6Ohm
Drain to Source Breakdown Voltage 600V
Max Junction Temperature (Tj) 150°C
Height 20.7mm
RoHS StatusROHS3 Compliant
In-Stock:3970 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.71000$1.71
10$1.51600$15.16
100$1.19850$119.85
500$0.92942$464.71

IPA60R600P7XKSA1 Product Details

IPA60R600P7XKSA1 Overview


A device's maximal input capacitance is 363pF @ 400V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 6A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 600V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 37 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 7 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This device reduces its overall power consumption by using drive voltage (10V).

IPA60R600P7XKSA1 Features


a continuous drain current (ID) of 6A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 37 ns


IPA60R600P7XKSA1 Applications


There are a lot of Infineon Technologies
IPA60R600P7XKSA1 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples

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