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TSM60NB260CI C0G

TSM60NB260CI C0G

TSM60NB260CI C0G

Taiwan Semiconductor Corporation

N-Channel Tube 260m Ω @ 3.9A, 10V ±30V 1273pF @ 100V 30nC @ 10V 600V TO-220-3 Full Pack, Isolated Tab

SOT-23

TSM60NB260CI C0G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 24 Weeks
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack, Isolated Tab
Operating Temperature-55°C~150°C TJ
PackagingTube
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power Dissipation-Max 32.1W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 260m Ω @ 3.9A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1273pF @ 100V
Current - Continuous Drain (Id) @ 25°C 13A Tc
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
RoHS StatusROHS3 Compliant
In-Stock:1611 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$2.69000$2.69
10$2.43200$24.32
100$1.95390$195.39
500$1.51970$759.85

TSM60NB260CI C0G Product Details

TSM60NB260CI C0G Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1273pF @ 100V is its maximum input capacitance.For this transistor to work, a voltage 600V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

TSM60NB260CI C0G Features


a 600V drain to source voltage (Vdss)


TSM60NB260CI C0G Applications


There are a lot of Taiwan Semiconductor Corporation
TSM60NB260CI C0G applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies

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