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FDN5618P

FDN5618P

FDN5618P

ON Semiconductor

FDN5618P datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FDN5618P Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 15 hours ago)
Contact PlatingTin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 30mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2000
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination SMD/SMT
ECCN Code EAR99
Resistance 170mOhm
Subcategory Other Transistors
Voltage - Rated DC -60V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating-1.25A
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 500mW Ta
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation500mW
Turn On Delay Time6.5 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 170m Ω @ 1.25A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 430pF @ 30V
Current - Continuous Drain (Id) @ 25°C 1.25A Ta
Gate Charge (Qg) (Max) @ Vgs 13.8nC @ 10V
Rise Time8ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 16.5 ns
Continuous Drain Current (ID) 1.2A
Threshold Voltage -1.6V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -60V
Dual Supply Voltage -60V
Max Junction Temperature (Tj) 150°C
Nominal Vgs 20 V
Height 1.22mm
Length 2.92mm
Width 1.4mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:11224 items

Pricing & Ordering

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FDN5618P Product Details

FDN5618P Description


The FDN5618P 60V P-Channel MOSFET uses ON Semiconductor's high voltage PowerTrench process. It has been optimized for power management applications.



FDN5618P Features


  • Fast switching speed

  • High performance trench technology for extremely low RDS(ON)

  • Power Dissipation: 500 mW

  • Turn-Off Delay Time: 16.5 ns

  • Nominal Vgs: 20 V

  • ROHS3 Compliant

  • No SVHC

  • Lead Free



FDN5618P Applications


  • DC-DC converters

  • Load switch

  • Power management

  • New Energy Vehicle

  • Photovoltaic Generation

  • Wind Power Generation

  • Smart Grid


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