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RJK0603DPN-A0#T2

RJK0603DPN-A0#T2

RJK0603DPN-A0#T2

Renesas Electronics America

MOSFET (Metal Oxide) N-Channel 5.2m Ω @ 40A, 10V ±20V 4150pF @ 10V 57nC @ 10V 60V TO-220-3

SOT-23

RJK0603DPN-A0#T2 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3
Operating Temperature150°C
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 125W Ta
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5.2m Ω @ 40A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 4150pF @ 10V
Current - Continuous Drain (Id) @ 25°C 80A Ta
Gate Charge (Qg) (Max) @ Vgs 57nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
RoHS StatusROHS3 Compliant
In-Stock:2296 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$3.12000$3.12
500$3.0888$1544.4
1000$3.0576$3057.6
1500$3.0264$4539.6
2000$2.9952$5990.4
2500$2.964$7410

RJK0603DPN-A0#T2 Product Details

RJK0603DPN-A0#T2 Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 4150pF @ 10V is its maximum input capacitance.For this transistor to work, a voltage 60V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

RJK0603DPN-A0#T2 Features


a 60V drain to source voltage (Vdss)


RJK0603DPN-A0#T2 Applications


There are a lot of Renesas Electronics America
RJK0603DPN-A0#T2 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies

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