MJD127G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 1000 @ 4A 4V DC current gain.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 4V @ 80mA, 8A.Single BJT transistor is essential to maintain the continuous collector voltage at 8A to achieve high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.Its current rating is -8A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Single BJT transistor contains a transSingle BJT transistorion frequency of 4MHz.During maximum operation, collector current can be as low as 8A volts.
MJD127G Features
the DC current gain for this device is 1000 @ 4A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 4V @ 80mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is -8A
a transition frequency of 4MHz
MJD127G Applications
There are a lot of ON Semiconductor MJD127G applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
