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BC817-25 RFG

BC817-25 RFG

BC817-25 RFG

Taiwan Semiconductor Corporation

BC817-25 RFG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Taiwan Semiconductor Corporation stock available on our website

SOT-23

BC817-25 RFG Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 24 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 300mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 500mA
Frequency - Transition 100MHz
RoHS StatusROHS3 Compliant
In-Stock:215274 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.032640$0.03264
500$0.024000$12
1000$0.020000$20
2000$0.018349$36.698
5000$0.017148$85.74
10000$0.015952$159.52
15000$0.015427$231.405
50000$0.015169$758.45

BC817-25 RFG Product Details

BC817-25 RFG Overview


DC current gain in this device equals 160 @ 100mA 1V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 700mV @ 50mA, 500mA.Single BJT transistor comes in a supplier device package of SOT-23.There is a 45V maximal voltage in the device due to collector-emitter breakdown.

BC817-25 RFG Features


the DC current gain for this device is 160 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the supplier device package of SOT-23

BC817-25 RFG Applications


There are a lot of Taiwan Semiconductor Corporation BC817-25 RFG applications of single BJT transistors.

  • Driver
  • Interface
  • Inverter
  • Muting

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