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PMSS3906,115

PMSS3906,115

PMSS3906,115

Nexperia USA Inc.

PMSS3906,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PMSS3906,115 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2009
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation200mW
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Frequency 150MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number PMSS3906
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation200mW
Transistor Application SWITCHING
Gain Bandwidth Product150MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA 1V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage40V
Transition Frequency 150MHz
Max Breakdown Voltage 40V
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 5V
VCEsat-Max 0.4 V
Turn Off Time-Max (toff) 700ns
Collector-Base Capacitance-Max 4.5pF
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:32540 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.654109$1.654109
10$1.560480$15.6048
100$1.472151$147.2151
500$1.388822$694.411
1000$1.310209$1310.209

PMSS3906,115 Product Details

PMSS3906,115 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 10mA 1V DC current gain.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 5mA, 50mA.The base voltage of the emitter can be kept at 5V to achieve high efficiency.The part has a transition frequency of 150MHz.An input voltage of 40V volts is the breakdown voltage.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.

PMSS3906,115 Features


the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 150MHz

PMSS3906,115 Applications


There are a lot of Nexperia USA Inc. PMSS3906,115 applications of single BJT transistors.

  • Driver
  • Inverter
  • Interface
  • Muting

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