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JANS2N3637

JANS2N3637

JANS2N3637

Microsemi Corporation

JANS2N3637 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JANS2N3637 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 33 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 3 weeks ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-65°C~200°C TJ
PackagingBulk
Published 2007
Series Military, MIL-PRF-19500/357
JESD-609 Code e0
Pbfree Code no
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code8541.29.00.95
Subcategory Other Transistors
Max Power Dissipation1W
Terminal Position BOTTOM
Terminal FormWIRE
Pin Count2
Qualification StatusQualified
Number of Elements 1
Configuration SINGLE
Power - Max 1W
Transistor Application AMPLIFIER
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 600mV
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 50mA 10V
Current - Collector Cutoff (Max) 10μA
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage175V
Transition Frequency 200MHz
Collector Base Voltage (VCBO) 175V
Turn Off Time-Max (toff) 650ns
Turn On Time-Max (ton) 200ns
Radiation HardeningNo
RoHS StatusNon-RoHS Compliant
In-Stock:127 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$78.64000$78.64
10$73.87200$738.72
25$70.53600$1763.4
100$66.72330$6672.33

JANS2N3637 Product Details

JANS2N3637 Overview


In this device, the DC current gain is 100 @ 50mA 10V, which is the ratio between the base current and the collector current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).As a result, the part has a transition frequency of 200MHz.In extreme cases, the collector current can be as low as 1A volts.

JANS2N3637 Features


the DC current gain for this device is 100 @ 50mA 10V
the vce saturation(Max) is 600mV @ 5mA, 50mA
a transition frequency of 200MHz

JANS2N3637 Applications


There are a lot of Microsemi Corporation JANS2N3637 applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

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