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STW75N60M6-4

STW75N60M6-4

STW75N60M6-4

STMicroelectronics

N-Channel 36m Ω @ 36A, 10V ±25V 4850pF @ 100V 106nC @ 10V 600V TO-247-4

SOT-23

STW75N60M6-4 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 16 Weeks
Mounting Type Through Hole
Package / Case TO-247-4
Operating Temperature-55°C~150°C TJ
Series MDmesh™ M6
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Reach Compliance Code compliant
Base Part Number STW75N
Power Dissipation-Max 446W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 36m Ω @ 36A, 10V
Vgs(th) (Max) @ Id 4.75V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4850pF @ 100V
Current - Continuous Drain (Id) @ 25°C 72A Tc
Gate Charge (Qg) (Max) @ Vgs 106nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
In-Stock:558 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$14.41000$14.41
10$13.05900$130.59
100$10.90250$1090.25
600$9.28550$5571.3

STW75N60M6-4 Product Details

STW75N60M6-4 Description


The most recent improvements to the well-known and consolidated MDmesh family of SJ MOSFETs are incorporated into the new MDmeshTM M6 technology. With its brand-new M6 technology, STMicroelectronics improves on the previous generation of MDmesh devices by combining great RDS(on) per area improvement with one of the most efficient switching behaviors available, as well as a user-friendly interface for optimal end-application efficiency.



STW75N60M6-4 Features


  • cut down on switching losses

  • Less RDS(on) per area compared to the previous generation

  • Minimal input gate resistance

  • Complete avalanche testing

  • Zener-defended

  • The additional driving source pin results in excellent switching performance.



STW75N60M6-4 Applications


  • Change of applications

  • Converters for LLCs

  • PFC converter boosters


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