Name: FCP190N60
Brand: ON Semiconductor
SKU: FCP190N60
Price: 2.97000 USD
Availability: InStock

new-10%

FCP190N60

Manufacturer part number:FCP190N60

Manufacturer:ON Semiconductor

Description:MOSFET (Metal Oxide) N-Channel Tube 199m Ω @ 10A, 10V ±20V 2950pF @ 25V 74nC @ 10V 600V TO-220-3

Case Package:SOT-23

Datasheet:FCP190N60 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Factory Lead Time	12 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Weight	1.8g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	SuperFET® II
Published	2013
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	208W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	208W
Turn On Delay Time	20 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	199m Ω @ 10A, 10V
Vgs(th) (Max) @ Id	3.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2950pF @ 25V
Current - Continuous Drain (Id) @ 25°C	20.2A Tc
Gate Charge (Qg) (Max) @ Vgs	74nC @ 10V
Rise Time	10ns
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	5 ns
Turn-Off Delay Time	64 ns
Continuous Drain Current (ID)	20.2A
Threshold Voltage	2.5V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	650V
Pulsed Drain Current-Max (IDM)	60.6A
Avalanche Energy Rating (Eas)	400 mJ
Height	16.51mm
Length	10.67mm
Width	4.83mm
REACH SVHC	No SVHC
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

FCP190N60 Product Details

FCP190N60 Description

A brand-new high voltage super-junction (SJ) MOSFET family called SuperFET? II MOSFET uses charge balance technology to achieve exceptional low on-resistance and lower gate charge performance. With this technology, conduction loss is minimized while switching performance, dv/dt rate, and avalanche energy are all improved. Because of this, SuperFET II MOSFET is ideal for switching power uses such PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications.