IRL540A Description
P-MOSFETNTMFS6H800NLT1G uses gate voltage to control drain current, which is characterized by simple driving circuit, low driving power, fast switching speed and high working frequency, but its current capacity is small, withstand low voltage.
IRL540A Applications
low power electronic devices
IRL540A FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved GateCharge
Extended Safe Operating Area
Lower Leakage Current:10uA(Max.)VDs=100V+Lower RDSION):0.046Ω(Typ.)
