Name: STW50N65DM2AG
Brand: STMicroelectronics
SKU: STW50N65DM2AG
Price: 8.91000 USD
Availability: InStock

Technical Specifications

Parameter Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 8 months ago)
Factory Lead Time	17 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	Automotive, AEC-Q101, MDmesh™ DM2
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	STW50N
Power Dissipation-Max	300W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	87m Ω @ 19A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3200pF @ 100V
Current - Continuous Drain (Id) @ 25°C	28A Tc
Gate Charge (Qg) (Max) @ Vgs	70nC @ 10V
Drain to Source Voltage (Vdss)	650V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±25V
Continuous Drain Current (ID)	28A
RoHS Status	ROHS3 Compliant

STW50N65DM2AG Product Details

STW50N65DM2AG Description

STW50N65DM2AG MOSFET is built on well-established silicon processes that supply designers with an array of devices. STW50N65DM2AG N-channel MOSFET comes in a variety of through-hole and surface mount packaging, with standard footprints, for easy design. STW50N65DM2AG STMicroelectronics is utilized to control High-Frequency Synchronous Buck Converters for computer Processor Power, High Frequency Isolated DC-DC Convertors with Synchronous Rectification Telecom and Industrial use.