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FQI7N60TU

FQI7N60TU

FQI7N60TU

ON Semiconductor

MOSFET N-CH 600V 7.4A I2PAK

SOT-23

FQI7N60TU Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 5 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Weight 2.084g
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2014
Series QFET®
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 600V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Current Rating7.4A
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSIP-T3
Qualification StatusNot Qualified
Number of Elements 1
Power Dissipation-Max 3.13W Ta 142W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation3.13W
Turn On Delay Time30 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1 Ω @ 3.7A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1430pF @ 25V
Current - Continuous Drain (Id) @ 25°C 7.4A Tc
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Rise Time80ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 60 ns
Turn-Off Delay Time 65 ns
Continuous Drain Current (ID) 7.4A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 1Ohm
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 29.6A
Avalanche Energy Rating (Eas) 580 mJ
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:6280 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.012584$1.012584
10$0.955268$9.55268
100$0.901196$90.1196
500$0.850185$425.0925
1000$0.802061$802.061

About FQI7N60TU

The FQI7N60TU from ON Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 600V 7.4A I2PAK.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the FQI7N60TU, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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